Infineon

63-4868-46 [Discontinued]IRF7309PBF Dual N/P-Channel MOSFET, 3 A, 4 A, 30 V HEXFET, 8-Pin SOIC Infineon IRF7309PBF

Features

  • Dual N/P-Channel Power MOSFET, Infineon. Infineon s dual power MOSFETs integrate two HEXFET® devices to provide space-saving, cost-effective switching solutions in high component density designs where board space is at a premium. A variety of package options is available and designers can choose the Dual N/P-channel configuration.

Spec

  • Quantity:1piece
  • Channel Type : N, P
  • Maximum Continuous Drain Current : 3 A, 4 A
  • Maximum Drain Source Voltage : 30 V
  • Maximum Drain Source Resistance : 50 mΩ, 100 mΩ
  • Maximum Gate Threshold Voltage : 1V
  • Minimum Gate Threshold Voltage : 1V
  • Maximum Gate Source Voltage : -20 V, +20 V
  • Package Type : SOIC
  • Mounting Type : Surface Mount
  • Transistor Configuration : Isolated
  • Channel Mode : Enhancement
  • Category : Power MOSFET
  • Maximum Power Dissipation : 1.4 W
  • Typical Turn-Off Delay Time : 22 ns, 25 ns
  • CODE No.:542-9377
Order No. 63-4868-46
Model No. IRF7309PBF
JAN Code 0000000000000
Standard price JPY: 86 USD: 0.76
Excange rate 1USD= 113.95JPY
Valid price in Japan
Quantity 1piece
  Discontinued
Stock in Japan -