Infineon

63-4868-54 [Discontinued]IRF9Z34NSPBF P-Channel MOSFET, 19 A, 55 V HEXFET, 3-Pin D2PAK Infineon IRF9Z34NSPBF

Features

  • P-Channel Power MOSFET 40V to 55V, Infineon. Infineon's range of discrete HEXFET® power MOSFETs includes P-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.

Spec

  • Quantity:1piece
  • Channel Type : P
  • Maximum Continuous Drain Current : 19 A
  • Maximum Drain Source Voltage : 55 V
  • Maximum Drain Source Resistance : 100 mΩ
  • Maximum Gate Threshold Voltage : 4V
  • Minimum Gate Threshold Voltage : 2V
  • Maximum Gate Source Voltage : -20 V, +20 V
  • Package Type : D2PAK (TO-263)
  • Mounting Type : Surface Mount
  • Transistor Configuration : Single
  • Channel Mode : Enhancement
  • Category : Power MOSFET
  • Maximum Power Dissipation : 3.8 W
  • Typical Turn-Off Delay Time : 30 ns
  • CODE No.:542-9484
Order No. 63-4868-54
Model No. IRF9Z34NSPBF
JAN Code 0000000000000
Standard price JPY: 140 USD: 1.23
Excange rate 1USD= 114.06JPY
Valid price in Japan
Quantity 1piece
  Discontinued
Stock in Japan -