Infineon

63-4868-62 IRFI530NPBF N-Channel MOSFET, 12 A, 100 V HEXFET, 3-Pin TO-220 Infineon IRFI530NPBF

Features

  • N-Channel Power MOSFET 100V, Infineon. The Infineon range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages. And form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.

Spec

  • Quantity:1piece
  • Channel Type : N
  • Maximum Continuous Drain Current : 12 A
  • Maximum Drain Source Voltage : 100 V
  • Maximum Drain Source Resistance : 110 mΩ
  • Maximum Gate Threshold Voltage : 4V
  • Minimum Gate Threshold Voltage : 2V
  • Maximum Gate Source Voltage : -20 V, +20 V
  • Package Type : TO-220
  • Mounting Type : Through Hole
  • Transistor Configuration : Single
  • Channel Mode : Enhancement
  • Category : Power MOSFET
  • Maximum Power Dissipation : 41 W
  • Maximum Operating Temperature : +175 °C
  • CODE No.:542-9620
Order No. 63-4868-62
Model No. IRFI530NPBF
JAN Code 0000000000000
Standard price JPY: 150 USD: 1.32
Excange rate 1USD= 113.95JPY
Valid price in Japan
Quantity 1piece
Stock in Japan
Qty.