Infineon

63-4868-97 [Discontinued]IRLR3410PBF N-Channel MOSFET, 17 A, 100 V HEXFET, 3-Pin DPAK Infineon IRLR3410PBF

Features

  • N-Channel Power MOSFET 100V, Infineon. The Infineon range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages. And form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.

Spec

  • Quantity:1piece
  • Channel Type : N
  • Maximum Continuous Drain Current : 17 A
  • Maximum Drain Source Voltage : 100 V
  • Maximum Drain Source Resistance : 105 mΩ
  • Maximum Gate Threshold Voltage : 2V
  • Minimum Gate Threshold Voltage : 1V
  • Maximum Gate Source Voltage : -16 V, +16 V
  • Package Type : DPAK (TO-252)
  • Mounting Type : Surface Mount
  • Transistor Configuration : Single
  • Channel Mode : Enhancement
  • Category : Power MOSFET
  • Maximum Power Dissipation : 79 W
  • Typical Gate Charge @ Vgs : 34 nC @ 5 V
  • CODE No.:543-0585
Order No. 63-4868-97
Model No. IRLR3410PBF
JAN Code 0000000000000
Standard price JPY: 130 USD: 1.14
Excange rate 1USD= 113.95JPY
Valid price in Japan
Quantity 1piece
  Discontinued
Stock in Japan -