Infineon

63-4869-07 [Discontinued]IRFR13N20DPBF N-Channel MOSFET, 13 A, 200 V HEXFET, 3-Pin DPAK Infineon IRFR13N20DPBF

Features

  • N-Channel Power MOSFET 150V to 600V, Infineon. Infineon's range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.

Spec

  • Quantity:1piece
  • Channel Type : N
  • Maximum Continuous Drain Current : 13 A
  • Maximum Drain Source Voltage : 200 V
  • Maximum Drain Source Resistance : 235 mΩ
  • Maximum Gate Threshold Voltage : 5.5V
  • Minimum Gate Threshold Voltage : 3V
  • Maximum Gate Source Voltage : -30 V, +30 V
  • Package Type : DPAK (TO-252)
  • Mounting Type : Surface Mount
  • Transistor Configuration : Single
  • Channel Mode : Enhancement
  • Category : Power MOSFET
  • Maximum Power Dissipation : 110 W
  • Length : 6.73mm
  • CODE No.:543-0917
Order No. 63-4869-07
Model No. IRFR13N20DPBF
JAN Code 0000000000000
Standard price JPY: 120 USD: 1.05
Excange rate 1USD= 114.06JPY
Valid price in Japan
Quantity 1piece
  Discontinued
Stock in Japan -