Infineon

63-4869-18 [Out of stock]IRFP2907PBF N-Channel MOSFET, 209 A, 75 V HEXFET, 3-Pin TO-247AC Infineon IRFP2907PBF

Features

  • N-Channel Power MOSFET 60V to 80V, Infineon. The Infineon range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages. And form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.

Spec

  • Quantity:1piece
  • Channel Type : N
  • Maximum Continuous Drain Current : 209 A
  • Maximum Drain Source Voltage : 75 V
  • Maximum Drain Source Resistance : 5 mΩ
  • Maximum Gate Threshold Voltage : 4V
  • Minimum Gate Threshold Voltage : 2V
  • Maximum Gate Source Voltage : -20 V, +20 V
  • Package Type : TO-247AC
  • Mounting Type : Through Hole
  • Transistor Configuration : Single
  • Channel Mode : Enhancement
  • Category : Power MOSFET
  • Maximum Power Dissipation : 470 W
  • Transistor Material : Si
  • CODE No.:543-1500
Order No. 63-4869-18
Model No. IRFP2907PBF
JAN Code 0000000000000
Standard price JPY: 610 USD: 5.35
Excange rate 1USD= 114.06JPY
Valid price in Japan
Quantity 1piece
  Out of stock
Stock in Japan -