Infineon

63-4869-25 [Discontinued]IRFL014NPBF N-Channel MOSFET, 2.7 A, 55 V HEXFET, 3+Tab-Pin SOT-223 Infineon IRFL014NPBF

Features

  • N-Channel Power MOSFET 55V, Infineon. Infineon's range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.

Spec

  • Quantity:1bag(5pieces)
  • Channel Type : N
  • Maximum Continuous Drain Current : 2.7 A
  • Maximum Drain Source Voltage : 55 V
  • Maximum Drain Source Resistance : 160 mΩ
  • Maximum Gate Threshold Voltage : 4V
  • Minimum Gate Threshold Voltage : 2V
  • Maximum Gate Source Voltage : -20 V, +20 V
  • Package Type : SOT-223
  • Mounting Type : Surface Mount
  • Transistor Configuration : Single
  • Channel Mode : Enhancement
  • Category : Power MOSFET
  • Maximum Power Dissipation : 2.1 W
  • Typical Turn-Off Delay Time : 12 ns
  • CODE No.:543-1651
Order No. 63-4869-25
Model No. IRFL014NPBF
JAN Code 0000000000000
Standard price JPY: 390 USD: 3.42
Excange rate 1USD= 114.06JPY
Valid price in Japan
Quantity 1bag(5pieces)
  Discontinued
Stock in Japan -