Infineon

63-4869-40 [Out of stock]IRF2807PBF N-Channel MOSFET, 82 A, 80 V HEXFET, 3-Pin TO-220AB Infineon IRF2807PBF

Features

  • N-Channel Power MOSFET 60V to 80V, Infineon. The Infineon range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages. And form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.

Spec

  • Quantity:1piece
  • Channel Type : N
  • Maximum Continuous Drain Current : 82 A
  • Maximum Drain Source Voltage : 80 V
  • Maximum Drain Source Resistance : 13 mΩ
  • Maximum Gate Threshold Voltage : 4V
  • Minimum Gate Threshold Voltage : 2V
  • Maximum Gate Source Voltage : -20 V, +20 V
  • Package Type : TO-220AB
  • Mounting Type : Through Hole
  • Pin Count : 3
  • Channel Mode : Enhancement
  • Category : Power MOSFET
  • Maximum Power Dissipation : 230 W
  • Dimensions : 10.54 x 4.69 x 8.77mm
  • CODE No.:543-2569
Order No. 63-4869-40
Model No. IRF2807PBF
JAN Code 0000000000000
Standard price JPY: 150 USD: 1.32
Excange rate 1USD= 114.06JPY
Valid price in Japan
Quantity 1piece
  Out of stock
Stock in Japan -