63-7972-23 [Discontinued]IRFR5410PBF P-Channel MOSFET, 13 A, 100 V HEXFET, 3-Pin DPAK Infineon IRFR5410PBF


  • P-Channel Power MOSFET 100V to 150V, Infineon. Infineon's range of discrete HEXFET® power MOSFETs includes P-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.


  • Quantity:1bag(5pieces)
  • Channel Type:P
  • Maximum Continuous Drain Current:13 A
  • Maximum Drain Source Voltage:100 V
  • Maximum Drain Source Resistance:205 mΩ
  • Maximum Gate Threshold Voltage:4V
  • Minimum Gate Threshold Voltage:2V
  • Maximum Gate Source Voltage:-20 V, +20 V
  • Package Type:DPAK (TO-252)
  • Mounting Type:Surface Mount
  • Pin Count:3
  • Channel Mode:Enhancement
  • Category:Power MOSFET
  • Maximum Power Dissipation:66 W
  • Number of Elements per Chip:1
  • CODE No.:784-0303
Order No. 63-7972-23
Model No. IRFR5410PBF
JAN Code 0000000000000
Standard price JPY: 810 USD: 7.06
Excange rate 1USD= 114.69JPY
Valid price in Japan
Quantity 1bag(5pieces)
Stock in Japan -